Aspect Ratio Trapping Grown SiGeSn Lasers for CMOS Monolithic Integration

In this project, Arktonics proposes to develop monolithically integrated high-performance (Si)GeSn lasers by using the novel aspect ratio trapping (ART) growth technology. The proposed transformative laser architecture is expected to fundamentally address the long-standing challenges of the missing high-performance light emitter to complete the whole suite of Siphotonics to enable many new applications, such as, high speed data optical interconnect, integrated microwave photonics, and on-chip low-cost chemical sensing. The Phase-II project is focused on the development of i) laser architectures and structures; ii) standard selective area growth and ART growth; iii) optically pumped lasers and electrically injected lasers; iv) CMOS process integration.