Monolithically Integrated GeSn Photodetectors on Si for High Performance IR Image Sensors

In this project, Arktonics proposes to develop monolithically integrated GeSn photodetectors on Si for high performance IR imaging sensors. The proposed sensing materials, GeSn semiconducting alloys, have spectral sensitivity that could cover a broad wavelength range from SWIR, MWIR, to LWIR. The GeSn sensor array could be manufactured using standard IC industry techniques for high volume production, high reliability, and low cost.  The proposed technology could be disruptive for IR imaging market.  This Phase-II project is focused on i) the design, growth, and fabrication of the proposed photodiode devices and ii) the development of CMOS monolithically integrated GeSn FPA.