SBIR/STTR Research Award
Monolithic Integrated High performance SiGeSn Imaging Sensor
Award amount
$250,000Program and phase
STTR · Phase IAward year
2023Award details
- Awarding agency
- Department of Defense
- Branch
- Office of the Secretary of Defense
- Recipient company
- EPITAXIAL LABORATORY INC
- Proposal award date
- 2023-02-01
- Contract end date
- 2024-03-31
- UEI
- L7N9HWUSKKX8
- Solicitation number
- 22.B
- Topic code
- OSD22B-003
Research abstract
This proposal describes development of a scalable processes compatible with standard CMOS BEOL processes for fabrication of monolithically integrated image sensors operating between 2 and 5 microns. In Phase I, we will demonstrate the effectiveness of the process for dramatically improving quality of the materials. High EQE, low noise, and megapixel (1024x1024) image sensors will be fabricated in Phase II by optimizing processes developed during Phase I.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Development of Integrated Infrared Focal Plane Arrays on Si
- Dual Band Avalanche Photodiode (APDs) Detectors and Integration Schemes
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices
- Green Diode Lasers (480-550 nm Spectral Regime)
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
19 SBIR/STTR records share this UEI (1995–2023). Reported award amounts total $3,761,655. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration