Ultra-Low-Noise Cryogenic HEMT Amplifiers for HEP Applications
Award amount
$206,162Program and phase
SBIR · Phase IAward year
2024Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- RECON RF, INC.
- Proposal award date
- 2024-02-12
- Contract end date
- 2025-02-11
- UEI
- ZNRMSSM3QSZ7
- Solicitation number
- DE-FOA-0003110
- Topic code
- C57-30c
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Advanced Semiconductor Production of Next-Gen X-Band SSPAs for USAF Radar, EW, & Comms
- Ultra-Low-Noise Cryogenic HEMT Amplifiers for HEP Applications
- Ultra-Efficient X-Band Solid State Power Amplifier for RF Accelerators
- Next-Gen RF Transistor Models for Ultra-Efficient RFICs
- Ultra-Efficient P/UHF Band Power Amplifiers
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of SQUID amplifier for readout electronics of Transition Edge Sensors
- Development of SQUID amplifier for readout electronics of Transition Edge Sensors
Research funding history
14 SBIR/STTR records share this UEI (2019–2025). Reported award amounts total $9,224,520. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: National Aeronautics and Space Administration, Department of Energy, Department of Defense, National Science Foundation, Department of Commerce