Silicon Photonics Integration

The goal of this project is to develop and or improve processes which determine the reliability of Silicon Photonic Integrated Circuit devices in high temperature, high vibration, and high humidity environments. A keen eye will be placed upon the influence of the adjacent devices within a given package, to identify failure mechanisms therein. Photonic Integrated Circuits (PICs) provide an opportunity to develop more efficient systems that the Department of Defense (DoD) will require, through reduced size weight and power (SWAP) compared to electronic integrated circuits. The military has unique requirements for PICs which include ōruggednessö and reliable operation for around 100,000 hours. During this run time, the device will be exposed to extreme environments (>100 ░C, < -40 ░C, and high radiation). Representative Silicon Photonic chips will be developed, with a focus on circuits that are relevant to microwave and analog signal processing. Phase Sensitive Innovations is particularly well suited to meeting these requirements, as we are experts in passive millimeter wave imaging and Radio Frequency Photonics. These devices will be tested for parameters such as semiconductor crystal point defects and dislocations, dielectric and semiconductor optical absorption changes, dopant diffusion, material mechanical stress, metal diffusion, outgassing, and solder creep. Tools that will be used to evaluate these parameters include X-ray radiography, Scanning Electron Microscope, Transmission Electron Microscope, Focused Ion Beam, and Atomic Force Microscopes. At the package level, important parameters include optical coupling on and off chip, electrical bond failure, and the loss of the hermetic seal will be examined. These tests will be performed in accordance with standards MIL-HDBK 217 and MIL-STD-810.