SBIR/STTR Research Award
Low-Cost Manufacturing of High Quality GaN Substrates
Award amount
$1,488,640Program and phase
SBIR · Phase IIAward year
2024Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2023-10-10
- Contract end date
- 2025-10-09
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 22.1
- Topic code
- MDA22-005
Research abstract
The outstanding materials properties of wide bandgap semiconductor materials, and of GaN in particular, provide great promise to enable highly efficient power electronics devices, high radiation hardness devices, and electronics systems which are able to operate at high temperatures. In this work, Kyma Technologies will advance the manufacturability and reduce the cost of 2ö and 100mm bulk GaN substrates to provide a wholly domestic supply of high quality GaN substrates for various commercial and MDA needs. Approved for Public Release | 23-MDA-11635 (9 Nov 23)
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
- Rad-Hard Ga2O3 Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Rapid Wafering of Wide Bandgap Substrates
- Low-Cost Manufacturing of High Quality GaN Substrates
- Wide Area c-BN Substrates
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration