SBIR/STTR Research Award
HVPE-Based Gallium Oxide Epiwafer Development
Award amount
$1,250,000Program and phase
SBIR · Phase II – Direct to Phase IIAward year
2023Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2023-09-19
- Contract end date
- 2025-09-19
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 22.4
- Topic code
- AF224-D029
Research abstract
Gallium oxide is poised to play an important role in next generation power and microwave electronics. Significant efforts by the Air Force to bolster the domestic substrate supply have been largely successful, however the vast majority of the commercially
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
- Rad-Hard Ga2O3 Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Industrial Scale Ga2O3 Epitaxial Structures for Next-Generation Microwave Electronics
- Bottom-up Scalable Epitaxial Growth of Gallium Oxide with Integrated Thermal Management for Next-Gen Electronics
- Epitaxial Growth of Galium Oxide for Next-Gen Microwave Electronics
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration