SBIR/STTR Research Award
Radiation-Tolerant Vertical GaN Diodes
Award amount
$160,000Program and phase
SBIR · Phase IAward year
2022Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2022-07-21
- Contract end date
- 2023-01-25
- UEI
- GDV6R1VLRVN7
- Solicitation number
- SBIR_22_P1
- Topic code
- Z1
Research abstract
In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing GaNshy; materials and domestically produced, chemically pure halide vapor phase epitaxy (HVPE)-derived epilayers and study radiation effects in these exciting new devices which are poised to offer improvements in size, weight, and efficiency over devices prepared from other wide-bandgap semiconductor materials.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Rad-Hard Ga2O3 Diodes
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration