Heterogeneous mm-wave GaN Heterojunction Bipolar Transistor

NIST Advanced Communications and Communications Technology Laboratory/RF Technology Division's focus area is on the next-generation wireless systems and recognizes the importance of mm‐wave communications for “key enabling technologies for 5G and beyond, including millimeter‐wave.” In response to this NIST CTL technology research program, the SBIR Phase I project will develop a high‐performance heterogeneously integrated Gallium Nitride (GaN) power-efficient heterojunction bipolar transistor (HBT) for millimeter‐wave (mm‐wave) RF power amplifiers for use in wireless network communications systems. The new HBT will be commercially developed for low SWaP‐C (Size, Weight, Power‐Cost), power efficiency, and operation up to mm‐wave frequencies (space communication up to 100 GHz). The Phase I feasibility program will demonstrate the performance parameters of a new GaN transistor with commercial market target metrics of high power-added efficiency (PAE), high linearity, high breakdown voltage, and high frequency.