SBIR/STTR Research Award
Low Voltage Radiation Hardened Optoelectronics for Optical Interconnects
Award amount
$999,810Program and phase
SBIR · Phase IIAward year
2018Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Threat Reduction Agency
- Recipient company
- QUANTTERA LLC
- Proposal award date
- 2018-05-29
- Contract end date
- 2020-05-28
- UEI
- C28HBL3SKH87
- Solicitation number
- 2015.2
- Topic code
- DTRA152-001
Research abstract
The Defense Threat Reduction Agency (DTRA) recognizes the need for low-power high-bandwidth radiation-hard optical interconnects to process more data more quickly and to replace electronic data.Our companys core development in optical communications with semiconductor materials is a unique fit for DTRAs low-power consumption high-bandwidth radiation-hard intra-chip communication components for satellites and UAVs.We will demonstrate a mid-IR integrated optical interconnect for intra-chip communications
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Heterogeneous mm-wave GaN Heterojunction Bipolar Transistor
- Low Voltage Radiation Hardened Optoelectronics for Optical Interconnects
- Radiation Hard Monolithically Integrated InGaAs-GaN MMICs
- Heterojunction GeSn based Photonic Devices
- SBIR Phase II: Ultra Low Power InAsN Semiconductor Transistors
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Radiation Hardened Optoelectronics for Optical Interconnects
- Radiation Hardened Optoelectronics for Optical Interconnects
Research funding history
14 SBIR/STTR records share this UEI (2005–2023). Reported award amounts total $3,615,281. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Commerce