Heterojunction GeSn based Photonic Devices
Award amount
$150,000Program and phase
SBIR · Phase IAward year
2015Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- QUANTTERA LLC
- Proposal award date
- 2014-10-01
- Contract end date
- 2015-03-31
- UEI
- C28HBL3SKH87
- Solicitation number
- 2014.1
- Topic code
- AF141-002
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Heterogeneous mm-wave GaN Heterojunction Bipolar Transistor
- Low Voltage Radiation Hardened Optoelectronics for Optical Interconnects
- Low Voltage Radiation Hardened Optoelectronics for Optical Interconnects
- Radiation Hard Monolithically Integrated InGaAs-GaN MMICs
- SBIR Phase II: Ultra Low Power InAsN Semiconductor Transistors
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Epitaxial Technologies for SiGeSn High Performance Optoelectronics Devices
- Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices
Research funding history
14 SBIR/STTR records share this UEI (2005–2023). Reported award amounts total $3,615,281. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Commerce