SBIR/STTR Research Award
Epitaxial Growth of Galium Oxide for Next-Gen Microwave Electronics
Award amount
$1,249,978Program and phase
SBIR · Phase II – Direct to Phase IIAward year
2023Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- SYNERGY RESEARCH LABS INC
- Proposal award date
- 2023-09-25
- Contract end date
- 2025-09-25
- UEI
- EJ19SYDA59M8
- Solicitation number
- 22.4
- Topic code
- AF224-D029
Research abstract
Current production methods of next-generation high critical field strength solid state electronic materials like the emerging UWBG Ga2O3 are too slow, yields are too low, electricity costs are too high, and defects plague the realization of an energy-effi
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Industrial Scale Ga2O3 Epitaxial Structures for Next-Generation Microwave Electronics
- Bottom-up Scalable Epitaxial Growth of Gallium Oxide with Integrated Thermal Management for Next-Gen Electronics
- HVPE-Based Gallium Oxide Epiwafer Development