SBIR/STTR Research Award

Low Temperature Plasma Enhanced Processing for Microelectronics Manufacturing

Award identifier 910940c8c6e69388625ea351a7d345b62420e3a8640a51bca24b71f02d7060d0Awarding agency Department of Energy

Award amount

$1,150,000

Program and phase

SBIR · Phase II

Award year

2023

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
MICROSOL TECHNOLOGIES INC.
Proposal award date
2023-08-21
Contract end date
2025-08-20
UEI
L7J9RY5L18R7
Solicitation number
Not reported
Topic code
C54-27a

Research abstract

In this SBIR proposal, an innovative low temperature annealing processing technology will be developed for the applications of: • Advanced Semiconductor CMOS low temperature, such as dopant activation, silicide formation, and post dielectric treatment • Post integrated circuits (ICs) or charge-coupled devices (CCDs) processing, including the formation of PN junction on the back side of wafers • Advanced annealing or formation for metal, biochemistry, or other new materials Current, commonly used annealing processes for dopant activation require temperatures higher than 600°C. For future advanced microelectronics, nanotechnology, and biotechnology applications, lower process temperatures are needed. In this proposal, a low temperature annealing technology will be developed based on innovative multiple energy sources processes. The technique combines several sources of energy to achieve high-level dopant activation at low temperatures. This process is compatible with integrated circuit sensor fabrication. During phase I, MicroSol has demonstrated the 500°C activation, and fabricated working diodes. MicroSol has also started collaboration with potential customers. In Phase II, we will systematically develop surface energy enhanced annealing recipes at temperatures as low as 400°C for process in the semiconductor manufacturing. The low temperature processed used for post IC will be developed and characterized. An initial prototype will be designed and built. After phase II, the company will work with semiconductor equipment company to co-develop commercial equipment. The wafer demo and equipment field testing will be performed. The broad areas of application for this low temperature technology include the internet of things (IoTs), supply chain management, industrial process monitoring, security and surveillance, health/medical monitoring, remote and hazard environment monitoring, smart buildings, and other wearable electronic applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

6 SBIR/STTR records share this UEI (2014–2023). Reported award amounts total $2,149,603. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Science Foundation

Agency intelligence

Department of Energy

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