Process Engineering Technology for Manufacture of High-Performance Radiation Detection Semiconductor Materials
Award amount
$206,451Program and phase
SBIR · Phase IAward year
2023Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- AMETHYST RESEARCH INC
- Proposal award date
- 2023-07-10
- Contract end date
- 2024-06-09
- UEI
- PXQASG336J91
- Solicitation number
- DE-FOA-0002903
- Topic code
- C56-03a
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Two-color Mid-Wave Infrared (MWIR) LED Array Infrared Scene Projector (IRSP)
- Development of a Process Technology for the Manufacture of Low-C-SWaP PbSe MWIR Focal Plane Arrays
- Development of a Domestic Supply of Large, High-performance LiNbO3 Crystals
- Plasmonic-Enhanced Type II Superlattice (T2SL) for High-Performance, High-Temperature LWIR/VLWIR Imaging
- Low-Cost High Sensitivity Subsurface CO2 Measurement System
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- Lead-free bismuth-based semiconductor radiation detector
- High-Yield Growth of High-Performance Radiation Detection Semiconductor Materials
- Doping and Contact Engineering of CsPbBr3 for Gamma-Ray Spectroscopy
Research funding history
73 SBIR/STTR records share this UEI (2005–2025). Reported award amounts total $29,873,783. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, National Science Foundation, Department of Commerce