High-Yield Growth of High-Performance Radiation Detection Semiconductor Materials
Award amount
$200,000Program and phase
SBIR · Phase IAward year
2023Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- CAPESYM INC
- Proposal award date
- 2023-07-10
- Contract end date
- 2024-04-09
- UEI
- CSZST8YFP7K1
- Solicitation number
- DE-FOA-0002903
- Topic code
- C56-03a
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Crystal Growth and Characterization of Doped VUV Crystals
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Process Engineering Technology for Manufacture of High-Performance Radiation Detection Semiconductor Materials
- Lead-free bismuth-based semiconductor radiation detector
- Doping and Contact Engineering of CsPbBr3 for Gamma-Ray Spectroscopy
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration