Radiation Hardened High Power “GBID” Ga2O3 Based Isolated DC-DC Converter

Recently realized radiation-hardened Gallium Oxide (Ga2O3) Metalndash;Oxidendash;Semiconductor Field-Effect Transistor, (MOSFETs) offers the opportunity to increase efficiency and power density of space DC-DC power converters. The state of the art for space DC-DC power conversion trails its commercial counterparts in terms of power density and efficiency. One challenge that arises when designing for space environment is the harsh environment power converters need to operate in, and limited availability of space qualified components and field demonstrated converter topologies. Another challenge is the manufacturing process and reliability testing of reliable radiation hardened power MOSFETs. Ga2O3nbsp;MOSFETs not only have better electrical performance than power MOSFETs, they have also demonstrated inherent tolerance to radiation. This results in fewer structural device modifications required to make Ga2O3nbsp;MOSFETs operate reliably under high radiation compared to their Silicon counterparts. Syrnatec, an ITAR compliant, HUBZone, minority woman-owned small business seeks to utilize its radiation hardened Ga2O3nbsp;High Power MOSFETs to implement a Fixed Frequency Isolated Phase Shifted Full Bridge DC-DC Converter that supports 10 kW of power over a wide-temperature (-70ordm;C to 150ordm;C), provides high-power-density (gt;2 kW/kg), high-efficiency (gt;96%) power electronics with associated drivers for voltage regulation.