GaN-on-GaN Gunn diodes for terahertz communications in manufacturing

SixPoint Materials proposes the development of Gunn diodes for the generation of terahertz waves. With the increasing volume of data in manufacturing facilities, 6G communication using terahertz H-band (~0.3 THz) will be utilized in 2035. However, the lack of the high-power oscillator of terahertz waves is impeding the development of the 6G wireless technology. We will solve this problem with gallium nitride (GaN) based Gunn diodes. Gunn diodes made of gallium arsenide (GaAs) are commonly used as microwave oscillators in Doppler radars. A theoretical calculation indicated that watt-class terahertz waves could be generated by GaN Gunn diodes. In addition, a successful demonstration of terahertz wave oscillation was reported by fabricating GaN Gunn diodes on GaN substrates. SixPoint will utilize our in-house, low-defect GaN substrates to achieve highly reliable, high-power GaN-on-GaN Gunn diodes. In Phase I, SixPoint, in collaboration with Professor Fay at the University of Notre Dame, will fabricate GaN-on-GaN Gunn diode and demonstrate terahertz oscillation over 0.3 THz. With successful oscillation, the team will collect basic physical/electrical parameters so that we can design the device with a simulator. In Phase II, the team will refine the device structure to develop packaged devices that can be evaluated by commercial users. During Phase I, the team will reach out to potential customers to research required device specifications, including output power and oscillation wavelength. The developed terahertz oscillator will accelerate the development of the 6G technology as well as other terahertz technology such as terahertz imaging.