SBIR/STTR Research Award

N-Polar Gallium Nitride High Electron Mobility Transistor in Low-Cost Process Technology for mm-wave Transceiver Applications

Award identifier 0ecc6708a91eec75a597c630bbc7cff521627b9a068287d9cc093c499bc4c5eaAwarding agency Department of Defense · Navy

Award amount

$1,999,959

Program and phase

SBIR · Phase II

Award year

2022

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
MONDE WIRELESS INC
Proposal award date
2022-06-21
Contract end date
2026-07-31
UEI
MCK4DJB7LMX8
Solicitation number
21.1
Topic code
N211-086

Research abstract

In this effort MONDE Wireless will design and fabricate N-polar GaN MMICs on low-cost, scalable substrates using state of the art processes suitable for mm-wave devices, with an epitaxy design which is capable of providing high power performance. MONDE Wireless will carry out detailed characterization of the MMIC performance metrics. Device equivalent circuit models will be refined and improved throughout the effort. MONDE will analyze application requirements and target designs towards applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

6 SBIR/STTR records share this UEI (2021–2025). Reported award amounts total $3,854,356. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy

Agency intelligence

Department of Defense

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