N-Polar Gallium Nitride High Electron Mobility Transistor in Low-Cost Process Technology for mm-wave Transceiver Applications
Award amount
$1,999,959Program and phase
SBIR · Phase IIAward year
2022Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- MONDE WIRELESS INC
- Proposal award date
- 2022-06-21
- Contract end date
- 2026-07-31
- UEI
- MCK4DJB7LMX8
- Solicitation number
- 21.1
- Topic code
- N211-086
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Removing Heat from Next Generation Wireless Systems
- Next Generation GaN Technology For Efficient Spectral Advantage
- N-polar GaN HEMTs for high performance RF switching
- Novel Materials Structure for Efficient and Cost-Effective Direct Emission Solid-State Lighting
- N-polar GaN HEMTs on scalable substrates for mm-wave applications
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Pseudolithic Integration for mm-wave Transceivers with Chiplet HEMTs
- Amplifier using N-polar T-gate gallium nitride High Electron Mobility transistor (ANTHEM)
- Rapid Manufacturing of Heterogeneous mm-Wave Phased Arrays
- Pseudolithic Integration for mm-wave Transceivers with Chiplet HEMTs (PITCH)
Research funding history
6 SBIR/STTR records share this UEI (2021–2025). Reported award amounts total $3,854,356. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy