SBIR/STTR Research Award

Novel Materials Structure for Efficient and Cost-Effective Direct Emission Solid-State Lighting

Award identifier 098a53b7eac974d0b9c80d6be098f7624a980d55ca8bdb8965b336824f16f892Awarding agency Department of Energy

Award amount

$199,949

Program and phase

SBIR · Phase I

Award year

2021

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
MONDE WIRELESS INC
Proposal award date
2021-06-28
Contract end date
2022-03-27
UEI
MCK4DJB7LMX8
Solicitation number
Not reported
Topic code
12c

Research abstract

Direct emission color-mixed lighting based on red-green-blue-amber light emitting diodes could reach efficacies of 325 lumen per watt, provided the so called “green efficiency gap” is closed. Achieving this Department of Energy roadmap target requires materials science breakthroughs in particular for emitters in the amber 570 – 590 nanometer range while simultaneously improving the droop performance of the devices at real-life high operating current densities and temperatures. The objective of our Phase I project is to demonstrate proof-of-concepts for a novel low defect density materials platform that enables the fabrication of efficient amber indium gallium nitride multiple quantum-well heterostructures. Based on the demonstration of efficient amber emission as a result of our Phase I work, we target the development of efficient amber light emitting diodes with high external quantum efficiencies during the SBIR Phase II program. To achieve these objectives, we will develop in Phase I materials structures that will enable the fabrication of amber light emitting diodes with fundamentally lower crystalline defect densities. This materials platform will allow us to create amber emitting indium gallium nitride multiple quantum-wells with reduced the intrinsic electric fields, reduced effective barrier heights in the light emitting region resulting in a high quantum efficiency. We will use optical and structural characterization to validate our development approach, based on which we will create the development plan for the light emitting diode product development during Phase II. The ultimate outcome of our project, if carried through to Phase II and commercialization, will be high efficiency amber indium gallium nitride light emitting diodes, which are so far elusive. Beyond the energy savings in lighting systems, the project advances benefit also emerging displays, thus significantly increasing the energy savings potential.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

6 SBIR/STTR records share this UEI (2021–2025). Reported award amounts total $3,854,356. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy

Agency intelligence

Department of Energy

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