N-polar GaN HEMTs for high performance RF switching

In this proposed STTR work MONDE Wireless will design record-performance RF front-end switch circuits for frequencies up to 110 GHz using its millimeter-wave frequency N-polar GaN MMIC process. These switch circuits will have record combined loss, isolation, linearity, bandwidth, and power handling. This combined performance is made possible by the use and properties of N-polar GaN. MONDE will characterize switch FETs for switch cutoff frequency, current density, breakdown voltage, loss, isolation, linearity, power handling, and robustness, and use this data to refine design models. MONDE will work with its research institution partner, the University of California at Santa Barbara, to investigate dielectric thin films and their applicability for these RF switch circuit applications.