Large format III-V ICLED materials for advancement of scene projector technology

In response to the Air Force solicitation to advance scene projection capabilities, IntelliEPI IR, Inc. (IIR) proposes to develop GaSb-based ICLED emitter materials for large format array applications.  The work will be performed in collaboration with technical advisors Analog Devices Inc. and Raytheon Vision Systems (RVS). The industrial technical inputs will ensure that the technology to be developed here is compatible with the existing manufacturing infrastructure—particularly being compatible with the most advanced epitaxial materials designs, existing system designs and automatically have opportunities for fast production insertion. The intent for this effort is to use an interband-cascade (IC) LED approach to develop 3-5 µm MWIR wavelength emitter epi materials based on GaSb-based materials system.  Different emission bands from SWIR to LWIR can be selected based on Air Force program needs. We will grow the ICLED emitter epi structure on our Sb-capable multi-wafer production MBE reactors and large diameter GaSb substrate for large array format application.  Most of the basic materials characterization and the more basic quick-turn device measurements such as x-ray, photoluminescence, and electroluminescence will be performed internally.  Our collaborators will confirm our internal measurements and provide assistance on some of the more complex measurements, device fabrication and system integration.  For this effort, Analog Devices has advanced interband cascade design expertise and expressed a strong interest to use this project as a vehicle to expand the applications of the technology as well as demonstrated device fabrication and processing based on 6inch wafer capabilities.  RVS, as a major IR systems defense contractor, can provide the expertise and capability for complete system integration of the ICLED array technology.