Strained Layer Superlattice based Dual-band MWIR/LWIR Infrared Focal Plane Array

This Phase II SBIR proposes to develop high-quality high-performance infrared FPA based on Type II SLS absorber material strain balanced to large diameter GaSb substrate for dual-band MWIR/LWIR thermal imaging applications. IntelliEPI IR, Inc., with L3Harris Technologies, will fabricate three lots of MWIR/LWIR dual-band FPAs with progressively improved key performance metrics including dark-current, quantum efficiency, noise, operability, modulation transfer function, and non-uniformity correction (NUC) stability. The FPAs shall be fabricated with the goal of meeting 3GEN FLIR performance objectives. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR, Inc and be fabricated to FPA based on a 1280 12um pixel pitch format by L3Harris. We will perform FPA qualification tests in a laboratory Dewar under 3 GEN FLIR relevant operation conditions.  The technical approach will be to develop improved epitaxial stack design and FPA fabrication techniques with a goal to dramatically improved detector properties such as detector QE and suitability for very large format array. This approach is based on existing high performance GaSb-based type-II SLS detector technology, with novel design, and development of MBE growth to implement the design, and fabrication and characterization of FPA from the epi grown material.