Type II SLS materials for three-color infrared FPA applications

This Phase II SBIR proposes to develop high-quality high-performance infrared epitaxy materials based on strained layer superlattice absorber material strain-balanced to GaSb substrate for multi-spectral FPA applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving low dark current, high quantum efficiency and 3-color spectral operation based on two stacked bias detector structures isolated from one another by an insulating layer.  Each band will target a key atmospheric transmission window such as the MWIR and LWIR. The technical approach will be to develop improved epitaxial stack design and grown methodology with a goal to dramatically improved detector properties. This approach is based on existing high performance GaSb-based detector technology, with novel design, development of MBE growth to implement the design, and fabrication and characterization of devices from the epi grown material. This Phase II effort will focus on material optimization and array demonstration with industry partner Anduril Imaging.