SBIR/STTR Research Award

Methodologies to Develop Radiation Testing Environments for Survivable Microelectronics

Award identifier 68d790c9d8a5d445a11ce4fe1d3f4d770bd9c9fc94ef79d09b52dbe60206da69Awarding agency Department of Defense · Missile Defense Agency

Award amount

$149,970

Program and phase

STTR · Phase I

Award year

2022

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
INNOSYS, INC.
Proposal award date
2021-12-06
Contract end date
2022-06-05
UEI
SKSZV1JCCLJ7
Solicitation number
21.B
Topic code
MDA21-T001

Research abstract

We will investigate the radiation effects on microelectronics due to gamma-rays and beta-rays and compare the effects on electrical and material properties between the two radiation types to formulate a quantitative mapping of radiation types (gamma and beta) and effects. The purpose is to: 1) Develop an overall physics-based strategy; 2) Define the experimental design, guided by analytical calculations, preliminary simulations, and the literature; 3) Measure gamma-ray effects in microelectronics; 4) Measure beta-ray (electron) effects in microelectronics; 5) Compare and develop a quantitative relationship between the dosimetric and radiation effects between gamma- and beta-ray radiation via guidance of electrical and material experimental result. Importantly, we will compare the radiation effects from this radiation such that future experimentation, simulation/modeling, and analyses can more confidently rely on the body of knowledge previously generated (primarily in gamma-ray fields). Phase I: Demonstrate and show feasibility of a methodology to develop test environments that will demonstrate survivability and extracting key metrics of this survivability using gamma- vs. beta-ray environments. We will consider whether existing methods of generating gamma and beta environments can be used, or whether innovative approaches are needed. Phase II: Implement the Phase I results in a prototype test design. Demonstrate the methodology by conducting an experimental study where the microelectronics are tested in partial and combined gamma- and/or beta-ray environments. Consider whether existing methods of generating, testing, and assessing microelectronics in gamma and beta environments can be used, or whether innovative approaches are needed. Phase III: Develop a quantitative comparison between gamma vs. beta environments. This will be based on Phase II experimental results, analysis of dose contributions to various components of the microelectronic architecture and resulting impacts on material and electrical properties. Here, the assessment of commercial/civil vs. military radiation hardness requirements apply. Approved for Public Release | 21-MDA-11013 (19 Nov 21)

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

73 SBIR/STTR records share this UEI (2004–2025). Reported award amounts total $33,892,460. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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