Atomic Precision Manufacturing for CNTFETs

Current semiconductors for digital and radio frequency/analog applications have reached or are near their limits. Efficiency improvements stopped years ago but continuous climbing of device volume drives rapid growth in the fraction of energy used by them and to produce them. In the absence of increased efficiency, the combined Information and Communications Technology ICT industries are on track consume 20% of global electrical energy by 2025.Although ICT progress is positively associated with economic growth, its energy impact and environmental fallout can no longer be ignored. Carbon nanotubes CNTs have unique, remarkable properties that make possible an up to 90% reduction in power use for semiconductors but major manufacturing obstacles have limited commercialization. The manufacturing requirements for CNT material include: high purity semiconducting nanotubes, tight diameter distribution and high density number of CNTs per unit width. To build CNT Field Effect Transistors CNTFETs, clean processes for contacts and dielectrics are also needed. All current semiconductors were first used for analog/RF radio frequency. This SBIR will deliver high performance and high efficiency RF CNTFETs. All major goals of the Phase I SBIR were achieved demonstrating the needed progress on the required elements of CNTFETs and an early commercialization opportunity in sensors. Phase II work on CNT materials and dielectric will deliver prototypes with breakthrough energy savings and RF performance. CNTFETs will significantly contribute to energy conservation efforts by delivering semiconductors that are far more efficient for a given performance and reducing manufacturing energy use. The proposed RF devices will extend the life of battery powered devices and lower costs and power use in communications systems. Longer term, CNTFETs will allow for advanced sensors and digital transistors far more efficient than silicon.