Carbon Nanotube FET Modeling and RF circuits

Carbon nanotubes (CNTs) have great potential for high performance RF applications. Theoretical study has shown that the electrical current in a CNT field effect transistor (CFET) is intrinsically linear. Today, linearity is the underlying limitation in increasing the data transport densities of wireless networks. The complex modulation protocols used to achieve higher data rates requires linear amplifiers. Increasing linearity in current bulk semiconductors is done by driving higher currents through large transistor channels and limiting the RF operating region to the most linear portion of the depletion curve. This wastes power and generates heat. The intrinsic linearity of CNTs promises significant improvements in spectral efficiency without sacrificing power. To optimize CFET performance for linearity and build circuits around it, a compact model of a CFET transistor has been developed. This Phase II work focuses on fabricating devices with varying layout design which can be used for further compact model parameter extraction, and in turn, using the subsequent modeling result to guide device design and enable circuit design, thus achieving improvement in both device and circuit performance. The results of this work will guide the architectures and layouts for highly linear CFET design and aid development of commercial CFET process technology.