Carbon Nanotube FET Modeling and RF circuits

The proposed work aims at detailed investigation of Carbon Nanotube Field-Effect Transistor (CNTFET) device design and its impact on Radio-frequency (RF) circuit performance in comparison to Si-MOSFETs and related circuits at the same channel lengths. The goal is to establish a geometry scalable CNTFET compact model for RF circuit design and determine its parameters based on characteristics from both fabricated and numerically simulated devices. The knowledge obtained through the proposed work will guide the device design and fabrication which will lead to the demonstration of the superiority of CNTFET device and circuit performance over CMOS for RF applications.