Low-Temperature Growth of Cadmium Telluride (CdTe) Semiconductors on ASIC
Award amount
$149,997Program and phase
SBIR · Phase IAward year
2019Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- RADIATION MONITORING DEVICES, INC.
- Proposal award date
- 2019-02-19
- Contract end date
- 2019-11-18
- UEI
- SCKQA85YU4U4
- Solicitation number
- DE-FOA-0001940
- Topic code
- 14a
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Transparent Conducting Oxide Based On-Chip Modulators for Applications at Cryogenic Temperatures
- Conformal Neutron Supermirrors by Atomic Layer Deposition
- Lead Chalcogenide Mid-Wave Infrared High Detectivity Detectors
- Enabling Precise Multi-Layer Optical Coatings on Highly Curved Lenses with Atomic Layer Deposition
- Lithium Niobate Crystal Growth and Wafer Fabrication
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Large-Area Atomic Layer Deposition (ALD) of Titanium Nitride for RF Windows
- High-Power RF Window for Pulsed RF Accelerating Cavities
- High Power RF Windows with Improved Multipactor Coating
- MULTI-MEGAWATT RF VACUUM WINDOW FOR HIGH DUTY-FACTOR RF ACCELERATING CAVITIES
- Micron-scale Direct-detection X-ray Detectors
Research funding history
930 SBIR/STTR records share this UEI (1983–2026). Reported award amounts total $346,950,619. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Energy, Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Homeland Security