SBIR/STTR Research Award

Low-Temperature Growth of Cadmium Telluride (CdTe) Semiconductors on ASIC

Award identifier 13ef6168fad7c3a501bc1140b6e24522507bd1c9bc63b00a101d89de2074a2b8Awarding agency Department of Energy

Award amount

$149,997

Program and phase

SBIR · Phase I

Award year

2019

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
RADIATION MONITORING DEVICES, INC.
Proposal award date
2019-02-19
Contract end date
2019-11-18
UEI
SCKQA85YU4U4
Solicitation number
DE-FOA-0001940
Topic code
14a

Research abstract

Recent advances in synchrotron radiation sources have dramatically increased their brightness, resulting in ultra-high photon fluence with beam size approaching nanometers. Their high brilliance and coherence have enabled experiments with unprecedented resolution that were previously impossible. However, in order to truly benefit from these techniques, detectors for hard X-ray with energies >30 keV are a must. Several new high-Z semiconductors have been explored for high energy X-ray detectors, one of the best being cadmium zinc telluride (CZT) or cadmium telluride (CdTe) in its single-crystal format bump bonded to an ASIC. While these sensors have demonstrated the potential for high quantum detection efficiency and high spatial resolution, there are serious technical and economic challenges in fabricating large-area detectors with single crystals. We propose to address this issue with an alternative innovative technique. The proposed technique will overcome the challenges currently faced in bump-bonding semiconductors to the ASIC. Specifically, the Phase I goal is to demonstrate the feasibility of directly depositing high Z semiconductors on ASIC chips using RMD’s patent-pending, innovative, low-temperature deposition process. The proposed technique is low-cost and scalable, and will allow the desired thickness of the CdTe to be deposited over large area in an economical manner. Performance of the CdTe deposited ASIC will be evaluated and compared to that of current bump-bonded CZT sensors. The proposed developments will benefit numerous synchrotron-based studies, particularly applications that use hard X-rays >30 keV. The proposed technique for directly depositing high Z semiconductors on large area ASICs will dramatically lower the cost of detectors compared to the alternative technique of bump- bonding. Besides synchrotron-based applications, the proposed detector will have widespread use in practically all X-ray imaging applications. In particular, techniques such as high-energy X-ray tomography/diffraction that are widely used in medical and industrial imaging, homeland security, materials science, and nuclear physics studies will all benefit from the proposed research.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

930 SBIR/STTR records share this UEI (1983–2026). Reported award amounts total $346,950,619. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Energy, Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Homeland Security

Agency intelligence

Department of Energy

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