Cryogenic Temperature Controlled Electrical Biasing In-situ TEM Sample Platform

Transmission electron microscopy (TEM) is primary characterization method used to determine nanoscale features and local internal structure of materials. However, conventional TEM observations are usually performed under conditions different from a material’s actual working environment. If electrical biasing signals can be applied to the sample then the relationship between structural properties and electronic properties can be investigated directly. Furthermore, if one at the same time subjects the sample to cryogenic temperature during imaging at high resolution, one can watch the material processes involved in structural and phase transformations as a result of electrical biasing at these low temperatures. Combining sample temperature control, using active LN2 and LHe cooling, with the application of electrical biasing signals will allow in- situ TEM studies of temperature induced transitions in material systems and allow real-time correlation between structure and electronic properties. Some of the important areas that this capability will find application are in the study of battery materials and quantum materials such as superconductors and topological insulators that are manifest only at extremely low temperatures. Therefore, in this Phase I project we aim to develop a double-tilt, cryo-electrical biasing holder that allows the sample to be concurrently cooled to liquid nitrogen (LN2) temperature of -150 °C or heated to greater than 1000 °C during electrical biasing experiments. In Phase II, we will continue the development effort to create a liquid helium (LHe) temperature holder, and bring the two products to market. The broader impact/commercial potential of this project will be the availability two in-situ TEM cooling electrical biasing sample holders (at both LN2 and LHe) with heating. This will enable scientists to expand the knowledge of structure-property relationships in a new class of materials, specifically the relation between temperature and electronic properties, and will allow for the accelerated development of the next generation of electronic, quantum and energy storage materials and devices.