Carbon Nanotube FET Modeling and RF circuits

The computing demands of future data-intensive applications far exceed the capabilities of today’s electronics and cannot be met by isolated improvements in transistor technologies or integrated circuit (IC) architectures alone. Carbon Nanotube Field-Effect Transistors (CNFET) technology has emerged as leading candidate for energy-efficient and high-performance digital systems. Unfortunately, substantial imperfections and variations inherent to carbon nanotubes (CNTs), combined with low current densities, restricted demonstrations to stand-alone transistors or logic gates, with severely limited performance, yield, and scalability. The motivations for the proposed effort is to establish a model based on the structural conditions of CNFET, i.e, current density, CNT density and alignment etc. MDC plan to work closely with Research Institute (RI) MIT to investigate CNFET device design and its impact on high-frequency (10-40 GHz) circuit performance in comparison to Si-MOSFETs and related circuits at the same channel lengths. The model will aim to design CNFET with performance comparable and out performing Si-MOSFETs. MDC will translate these models into a unified robust software user interface.