SBIR/STTR Research Award
High Growth Rate GaN MOCVD Platform for Ultrahigh Voltage Devices
Award amount
$124,986Program and phase
SBIR · Phase IAward year
2019Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- AGNITRON TECHNOLOGY, INC.
- Proposal award date
- 2018-10-15
- Contract end date
- 2020-01-30
- UEI
- NGDVGM4G1YM4
- Solicitation number
- 18.2
- Topic code
- N182-134
Research abstract
Future DoD and Navy missions require advances in current high voltage power electronics technology. In this proposed effort, Agnitron will investigate the limitations of existing MOCVD technology and propose solutions towards an MOCVD system for Gallium Nitride capable of growth rates over 10um per hour at pressures from low to super atmospheric. The goal is to achieve low background concentrations under these conditions as well as demonstrate heavily doped p+ and n+ (Al)GaN layers <50nm thick. At the end of this program we will establish a plan for optimizing the growth process as well as reactor configuration to meet the objectives of the Phase I program.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Industrial Scale Ga2O3 Epitaxial Structures for Next-Generation Microwave Electronics
- Enabling Industry scalable GaN-based Technology for Heterogeneous Integration of RF power devices Via van der Waals 2D h BN Release layer
- Develop Ultra-Fast Metastable Ion Implant Activation System
- Miniature power supplies using beta-Ga2O3 electronics for size, weight, and power reduction on low-cost, attritable aircrafts
- Develop Ultra-Fast Metastable Ion Implant Activation System
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Ultrapure, High Growth Rate Epitaxial Technologies for Gallium Nitride Ultra High Voltage Power Electronics
- Tool for High Growth Rate Produced Ultrapure GaN and Ultra High Voltage Power Electronics
Research funding history
16 SBIR/STTR records share this UEI (2013–2024). Reported award amounts total $11,320,870. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Energy