Nanofilament-Based Rad Hard Resistive Memories and Devices

NanoSonic will work with Virginia Tech nanomaterial physicists and Honeywell space system engineers to develop, demonstrate and transition to manufacturing rad hard resistive random access memories (RRAM) and related electronics based on resistive nanofilament bridges.Through prior basic research, NanoSonic has demonstrated early metal-insulator-metal (MIM) memory devices. Data is stored by creating a resistive bridge between the electrodes and erased by destroying the bridge.Data is not stored as electric charge so the device is radiation hard by design.We have also observed quantized and partial quantized conductance effects in the nanofilament bridges that connect the electrodes through the insulating layer. This means that data writing can potentially occur at low conductance, so RRAM can operate at low bias currents and thus low dissipated power.Important as well, we have observed this behavior at room temperature, suggesting that such quantum material effect-based mechanisms may be practical for next generation RRAM and other devices.During Phase I, NanoSonic would design, fabricate, demonstrate and deliver low power rad hard RRAM and related memory resistor (memristor) devices, and, with Honeywell, plan how technology may be transitioned to the manufacturing of rad hard memory for space systems and related electronic components for commercial use.Approved for Public Release | 18-MDA-9710 (6 Jul 18)