Radiation Hardened Electronics and Techniques
Award amount
$99,999Program and phase
SBIR · Phase IAward year
2018Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INNOSYS, INC.
- Proposal award date
- 2018-06-25
- Contract end date
- 2018-12-24
- UEI
- SKSZV1JCCLJ7
- Solicitation number
- 2018.1
- Topic code
- MDA18-007
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Call for Innovative Defense-Related Dual-Purpose Manufacturing Technologies/Solutions with a Clear Air Force and Space Force Stakeholder Need.
- Radiation Resistant Stepper Motors
- Open Topic for Radiation Hardened Microelectronics
- Venus Energy Converter
- Extremely High Frequencey Transmitters for Radar Application.
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Radiation Hardened Electronics and Techniques
- Wide bandgap SiC based field effect transistor for radiation hard microelectronics
- Nanoscale Vacuum Channel Transistor (NVCT)
- Development of Novel RAD-Hard ASICs and a Modular Design Methodology Using Asynchronous Architectures
- Nanofilament-Based Rad Hard Resistive Memories and Devices
Research funding history
73 SBIR/STTR records share this UEI (2004–2025). Reported award amounts total $33,892,460. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration