SBIR/STTR Research Award

Nanoscale Vacuum Channel Transistor (NVCT)

Award identifier 10e01950006fd982a515a9ed299d304713561d0407d7229ae2c9df9775b7cf28Awarding agency Department of Defense · Missile Defense Agency

Award amount

$154,890

Program and phase

SBIR · Phase I

Award year

2018

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Innoflight, Inc.
Proposal award date
2018-06-25
Contract end date
2019-09-20
UEI
KR35JNZWXF97
Solicitation number
18.1
Topic code
MDA18-007

Research abstract

Nanoscale Vacuum Channel Transistor (NVCT) technology has been demonstrated as intrinsically insensitive to ionizing radiation effects and robust enough to operate in elevated thermal environments. Nanofabrication processes need to be matured and methods need to be developed to enable advance circuits. The Ballistic Missile Defense System (BMDS) sensor and countermeasure elements can leverage NVCT based circuits to reduce shielding mass, minimize circuit redundancy, and enable operate-through natural and man-made radiation environments. Approved for Public Release | 18-MDA-9710 (6 Jul 18)

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

54 SBIR/STTR records share this UEI (2005–2021). Reported award amounts total $32,534,020. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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