Low-Defect GeSn and SiGeSn for Integrated High-Performance SWIR and MWIR Optoelectronics

Advanced imaging techniques and, novel intelligence, surveillance and reconnaissance (ISR) methods are of great interest to the U.S. Air Force and other Department of Defense (DoD) agencies, but associated high-costs of III-V and II-VI MWIR and SWIR materials prohibit their practical widespread deployment and integration with other optoelectronic devices. In this program, we intend to investigate the use of GeSn/SiGeSn materials for developing novel low cost imaging sensors and emitters, as well as the possibility of integrating these components into large photonic-electronic monolithic integrated circuits. Several processes will be evaluated to improve crystallinity of current SiGeSn structures. The goal is to produce low-defect high-quality thin films, whereby direct-gap semiconductor devices become possible across MWIR and SWIR wavelengths. These new materials will enable a new breed of highly integrated optoelectronic components, that will enable both high-performance and low-cost infrared systems for the U.S. Warfighter.