Laser and Rapid-thermal Crystalization of GeSn and SiGeSn layers for IR detectors and Si-based OE devices
Award amount
$149,988Program and phase
STTR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- FREEDOM PHOTONICS LLC
- Proposal award date
- 2016-06-13
- Contract end date
- 2017-03-13
- UEI
- FQ98KK1G9199
- Solicitation number
- 2016.0
- Topic code
- AF16-AT28
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High- Efficiency Kw-class 1550 nm Steerable Diffraction-Limited Laser Diode Arrays for Energy Web Dominance
- High-Speed Optical Fiber Data-Links for Space-Based Cryogenic Read-Out Integrated Circuits
- 1790nm tunable laser for VOC monitoring
- GeSiSn Avalanche Photodiode Arrays for High-Sensitivity SWIR Imaging Applications
- High Efficiency kW-class 1550 nm Steerable Diffraction-Limited Laser Diode Arrays for Energy Web Dominance
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-Defect GeSn and SiGeSn for Integrated High-Performance SWIR and MWIR Optoelectronics
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices
- GeSn High-Performance IR Detectors and Emitters
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect
Research funding history
196 SBIR/STTR records share this UEI (2005–2023). Reported award amounts total $74,583,672. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy, Environmental Protection Agency, Department of Agriculture