SBIR/STTR Research Award
GeSn High-Performance IR Detectors and Emitters
Award amount
$149,999Program and phase
STTR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- APIC CORPORATION
- Proposal award date
- 2016-06-14
- Contract end date
- 2017-03-13
- UEI
- KJXJASK9U6F9
- Solicitation number
- 2016.0
- Topic code
- AF16-AT28
Research abstract
Tensile-strained germanium tin structures will be developed for infrared emitters and detectors that are compatible with silicon fabrication processes.Optical detectors in the wavelength range of 2-5 microns will be developed by using GeSn on silicon ...
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Integrated Laser/Modulator Transmitter Module for Analog RF over Fiber Applications
- High-Performance Semiconductor Lasers With Narrow Line-Width, Low RIN And High Power
- Waveguide Coupled Uni-Traveling Carrier Balanced Photodetector
- Integrated Optical CDMA Chip for Multi-Level Security
- Optical clock distribution in 65nm CMOS process node
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-Defect GeSn and SiGeSn for Integrated High-Performance SWIR and MWIR Optoelectronics
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices
- Laser and Rapid-thermal Crystalization of GeSn and SiGeSn layers for IR detectors and Si-based OE devices
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect
Research funding history
9 SBIR/STTR records share this UEI (2009–2016). Reported award amounts total $2,459,700. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense