SBIR/STTR Research Award
Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect
Award amount
$150,000Program and phase
STTR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- EPITAXIAL LABORATORY INC
- Proposal award date
- 2016-07-14
- Contract end date
- 2017-04-14
- UEI
- L7N9HWUSKKX8
- Solicitation number
- 2016.0
- Topic code
- AF16-AT28
Research abstract
This proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget excimer laser and rapid thermal annealing/crystallization for ...
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Monolithic Integrated High performance SiGeSn Imaging Sensor
- Development of Integrated Infrared Focal Plane Arrays on Si
- Dual Band Avalanche Photodiode (APDs) Detectors and Integration Schemes
- Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices
- Green Diode Lasers (480-550 nm Spectral Regime)
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-Defect GeSn and SiGeSn for Integrated High-Performance SWIR and MWIR Optoelectronics
- Laser and Rapid-thermal Crystalization of GeSn and SiGeSn layers for IR detectors and Si-based OE devices
- GeSn High-Performance IR Detectors and Emitters
Research funding history
19 SBIR/STTR records share this UEI (1995–2023). Reported award amounts total $3,761,655. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Aeronautics and Space Administration