Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits

This project targets the commercialization of Atomic Layer Deposition (ALD) process for manufacturing of low-K dielectric layers for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, the objective is to provide conformal and substantially lower dielectric constant substitution for currently used dielectric layers. The project aims for a dielectric constant in the range of 2.5-3.0, leakage current 200 V operation voltage. These low-K dielectric films will support GaN MMICs manufacturing well into the 100 nm transistors-generation and beyond. Such advanced GaN MMICs generations will have ground-breaking impact on RF performance, reliability, power efficiency, size and cost of many military systems and commercial products.