SBIR/STTR Research Award
High Voltage Metal Insulator Metal (MIM) Capacitor Technology
Award amount
$149,960Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- SUNDEW TECHNOLOGIES LLC
- Proposal award date
- 2012-06-05
- Contract end date
- 2014-02-01
- UEI
- Q4JJMNHWLNU4
- Solicitation number
- 2012.1
- Topic code
- N121-071
Research abstract
This proposal targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher dielectric constant substitution for currently used dielectric layers, integrated with metal electrodes. Higher voltage capacitors will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
- High Voltage Metal Insulator Metal (MIM) Capacitor Technology
- Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
- Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
- Development of Robust, Effective, Inexpensive, Flexible Water and Oxygen Barriers for Flexible Organic Light-Emitting Diodes (FOLEDs)
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
13 SBIR/STTR records share this UEI (2002–2017). Reported award amounts total $8,016,595. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation