SBIR/STTR Research Award

High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Award identifier d98adeaaeea61dec06a9e11ea6e460545b13c1e8a3180e415d45e1076cee3d04Awarding agency Department of Defense · Navy

Award amount

$1,499,625

Program and phase

SBIR · Phase II

Award year

2014

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
SUNDEW TECHNOLOGIES LLC
Proposal award date
2014-02-10
Contract end date
2017-06-18
UEI
Q4JJMNHWLNU4
Solicitation number
2012.1
Topic code
N121-071

Research abstract

This project targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, the objective of this project is to provide a higher dielectric constant substitution for currently used dielectric layers, as well as to integrate high work-function metal electrodes and 3D capacitor design. The project intends to develop MIM capacitors with leakage current 200 V operation voltage, 500 pF/mm2 capacitance density and >107 hours MTTF at 50 V and 125 deg C operation temperature.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

13 SBIR/STTR records share this UEI (2002–2017). Reported award amounts total $8,016,595. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation

Agency intelligence

Department of Defense

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