SBIR/STTR Research Award
Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
Award amount
$149,808Program and phase
SBIR · Phase IAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- SUNDEW TECHNOLOGIES LLC
- Proposal award date
- 2012-05-01
- Contract end date
- 2013-05-31
- UEI
- Q4JJMNHWLNU4
- Solicitation number
- 2012.1
- Topic code
- N121-001
Research abstract
This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
- High Voltage Metal Insulator Metal (MIM) Capacitor Technology
- Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits
- High Voltage Metal Insulator Metal (MIM) Capacitor Technology
- Development of Robust, Effective, Inexpensive, Flexible Water and Oxygen Barriers for Flexible Organic Light-Emitting Diodes (FOLEDs)
Research funding history
13 SBIR/STTR records share this UEI (2002–2017). Reported award amounts total $8,016,595. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation