III-Nitride Ternary Alloy Substrates for Next Generation UV Optoelectronics and Power Electronics

Innovative Advanced Materials (IAM), Inc., founded by Dr. W. Alan Doolittle, proposes to develop a new generation of bulk synthesis tools operating at significantly higher pressure than current prototype systems which already demonstrate tantalizing material quality and high growth rates with proven alloy and dopant control capability to produce AlGaN substrates with remarkably low cost and high quality. Many of the current substrate bottlenecks such as cost, ternary alloy availability and conductivity options (n, p and undoped) will be bypassed via this technology. Phase 1 of this effort will show proof of concept using an existing highly modified MBE tool already capable of achieving 10 m/hour growth rates substantially faster than existing ammonothermal tools and comparable to HVPE deposition rates. Yet, unlike these leading technologies in the bulk AlN and GaN binary substrate world, the IAM technology alloys for immediate production of AlGaN ternary alloys of any composition and enhanced doping capabilities including p-type dopants. Additionally, unlike leading PVD AlN approaches which cannot be used for GaN growth, the IAM technology covers the entire AlGaN range without significant complication. The new IAM source technology also provides future (phase II) options for continuous source loading, affording extremely large crystal sizes.