SBIR/STTR Research Award
High-Quality AlGaN Substrates for Optical and Electronic Applications
Award amount
$750,000Program and phase
STTR · Phase IIAward year
2018Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2018-06-08
- Contract end date
- 2020-06-08
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2017.0
- Topic code
- AF17A-T024
Research abstract
Kyma Technologies, the leading domestic supplier of crystalline III-N substrate materials, is teamed with leading AlGaN materials & device experts at Sandia National Laboratories (SNL) to develop high-quality n-type conductive 2-inch diameter epi-ready free-standing AlGaN substrates in support of next generation AlGaN devices with applications in ultraviolet optoelectronics, power electronics, and high frequency electronics.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High-Quality AlGaN Substrates for Optical and Electronic Applications
- III-Nitride Ternary Alloy Substrates for Next Generation UV Optoelectronics and Power Electronics
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration