High-Quality AlGaN Substrates for Optical and Electronic Applications
Award amount
$149,998Program and phase
STTR · Phase IAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2017-06-09
- Contract end date
- 2018-03-12
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2017.0
- Topic code
- AF17A-T024
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- High-Quality AlGaN Substrates for Optical and Electronic Applications
- III-Nitride Ternary Alloy Substrates for Next Generation UV Optoelectronics and Power Electronics
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration