AlN-Based Power Electronics Device Epiwafer Manufacturing

Crystalline aluminum nitride AlN) materials have the potential to support a new generation of ultra-high performance power electronics. While great progress has been realized in producing high structural quality AlN substrates, there is currently no viable method for controllably producing electrically conductive AlN device layers on top of such substrates. R&D groups are attempting to develop metalorganic chemical vapor deposition MOCVD) and other laboratory scale processes for controlling the electrical conductivity of AlN, yet those approaches are too expensive and dont support high purity AlN growth which then prevents the ability to gain control over electrical conductivity. Kyma will apply their high growth rate, high purity hydride vapor phase epitaxy HVPE) technology along with proprietary doping approaches to develop a manufacturable process for producing electrically conductive AlN device layers on top of high structural quality AlN substrates provided by Kymas partner HexaTech. Advanced transport characterization studies will be carried out by David Look of Wright State University to document the achieved levels of electrical conductivity and related parameters of importance including electron concentration and mobility. High performance AlN power electronics will compete with other wide bandgap semiconductors in the market for discrete power electronic components and are expected to take over 20% of the overall market which is expected to reach $15B by 2020. Key benefits include major energy savings as well as new high paying jobs in four major industry sectors: buildings and industrial, electronics and IT, renewables and grid storage, and transportation.