Epitaxial Technologies for SiGeSn High Performance Optoelectronic Devices

ABSTRACT: Silicon-based lasers/detectors have long been desired for owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the reach of Si technology by expanding its functionalities well beyond electronics. The goal of this project is to first develop high quality SiGeSn material and then use it to demonstrate prototype optoelectronic devices. The research plan includes UHV-CVD growth of mid-IR SiGeSn materials and material characterization as well as development of GeSn mid-IR detectors and lasers. The innovative claims include: i) using novel techniques such as Plasma Enhancement and Atomic Hydrogen Enhancement for device quality SiGeSn growth, ii) high performance GeSn based photodetectors with high responsivity, high gain-bandwidth product, low dark current, CMOS compatibility, and extended spectra response, iii) GeSn based lasers transforming the new active direct band gap material to the first all group-IV inter-band lasers on Si. The work will create significant impacts to the scientific community by enabling the so-called Si optoelectronics superchip, to extend the current Si-photonics wavelength range to mid-infrared, and to enable numerous commercial applications in telecom, consuming electronics, to renewable energy. BENEFIT: Devices such as lasers, detectors, and solar cells with applications in telecom, consuming electronics, and renewable energy