SBIR/STTR Research Award

Materials and Life Cycle Sustainability

Award identifier 2421ad586a22608d797151f6b9e2f15ea8bb49b5e5bfdef9e8ac201a2d427e8aAwarding agency Department of Defense · Missile Defense Agency

Award amount

$99,913

Program and phase

SBIR · Phase I

Award year

2013

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
NEXGENSEMI CORPORATION
Proposal award date
2013-03-14
Contract end date
2013-09-17
UEI
GQSJQMBAEJ79
Solicitation number
2012.3
Topic code
MDA12-035

Research abstract

NexGenSemi Corporation develops advanced semiconductor manufacturing technology for tomorrow"s leveraged electronics. The company is proposing the development of a novel layer-by-layer patterned growth from direct digital design for semiconductor electronics manufacturing. The material growth technology is a modified heterogeneous patterned nucleation deposition process which is key to manufacturing electronics in a single prototyping system. The novelty is a 10,000x manufacturing improvement rate leading to quick turn prototype and pilot production semiconductor manufacturing. The program has defined objectives and goals outlined to meet commercialization standards to successfully integrate the technology into industry

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

13 SBIR/STTR records share this UEI (2009–2023). Reported award amounts total $3,518,921. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense

Agency intelligence

Department of Defense

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