Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications

In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), Design and simulation of Power Devices and systems (NextWatt LLC), Epitaxial Growth of High Performance HEMT heterostructures (Virginia Commonwealth University), and Fabrication of Advanced Semiconductor Devices (The Pennsylvania State University). The effort aims to develop a high power normally-off HEMT based on InAlN/GaN epilayers grown on bulk GaN substrates. The work naturally stems from proven efforts in the realm of high performance RF FETs already developed by prior and ongoing collaborations within the team. This effort will build on the high quality materials and advanced device performances already demonstrated from previous works and apply them for use in power HEMT devices. The unique capabilities of the team and existing collaborative efforts make the team well positioned to successfully achieve normally-off high power switching HEMTs with VT>1V, VBR>1000V, RON<20-mm and low gate and drain leakage values of<1A/mm.