SBIR/STTR Research Award
AlInN/GaN heterostructures for X-band RF power amplification
Award amount
$99,408Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2009-03-27
- Contract end date
- 2009-09-27
- UEI
- ZLAMG4KBKN15
- Solicitation number
- 2008.3
- Topic code
- MDA08-024
Research abstract
SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented MEMOCVD® growth technology which allows for high quality III-Nitride epitaxial material deposition at reduced temperatures required for In incorporation. Novel epitaxial structure design will be combined with our patented MOSHFET technology and patent-pending five-terminal transistor design to reduce the gate leakage, eliminate current collapse and suppress the ¡°spread¡± of the gate region toward the drain under high drain bias in order to demonstrate stable high-power performance at X-band frequency.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of High Performance AlInN-Based HEMTs
- AlInN/GaN heterostructures for X-band RF power amplification
- Development of High Performance AlInN-Based HEMTs
- Advanced Nitride Heterostructures for X-Band GaN HEMTs
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture